Title |
Atomic Layer Deposition of Niobium Nitride from Different Precursors |
Authors |
- P. Pizzol, P. Chalker, J.W. Roberts, J. Wrench
The University of Liverpool, Liverpool, United Kingdom
- O.B. Malyshev, R. Valizadehpresenter
STFC/DL/ASTeC, Daresbury, Warrington, Cheshire, United Kingdom
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Abstract |
Advancements in technology have taken bulk niobium cavities close to their theoretical operational limits of 45 MV/m, pushing the research to explore novel materials, such as niobium based alloys . Theoretical studies suggest that a composite material composed of alternative superconductor / insulator multilayers would surpass the bulk niobium limits. Chemical vapour deposition (CVD) can deposit mi-crons thick Nb films in less than an hour, at the expense of precise thickness control. Atomic layer deposition (ALD), instead, even if considerably slower than CVD can be used in applications where the thickness of the deposited layers needs to be controlled with a resolution down to the nanometer. This article presents the preliminary results obtained by using plasma assisted ALD techniques to deposit NbN based compounds starting from chlorinated precursors and organic ones, and the design for a new deposition system currently being built at the Daresbury Laboratories.
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Paper |
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Conference |
IPAC2017, Copenhagen, Denmark |
Series |
International Particle Accelerator Conference (8th) |
Proceedings |
Link to full IPAC2017 Proccedings |
Session |
Posters Monday 3 |
Date |
15-May-17 16:00–18:00 |
Main Classification |
07 Accelerator Technology |
Sub Classification |
T07 Superconducting RF |
Keywords |
plasma, niobium, experiment, controls, simulation |
Publisher |
JACoW, Geneva, Switzerland |
Editors |
Volker RW Schaa (GSI, Darmstadt, Germany); Gianluigi Arduini (CERN, Geneva, Switzerland); Juliana Pranke (ESS, Lund, Sweden); Mike Seidel (PSI, Villigen, Switzerland); Mats Lindroos (ESS, Lund, Sweden) |
ISBN |
978-3-95450-182-3 |
Published |
May 2017 |
Copyright |
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