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https://doi.org/10.18429/JACoW-IPAC2017-MOPVA100
Title Atomic Layer Deposition of Niobium Nitride from Different Precursors
Authors
  • P. Pizzol, P. Chalker, J.W. Roberts, J. Wrench
    The University of Liverpool, Liverpool, United Kingdom
  • O.B. Malyshev, R. Valizadehpresenter
    STFC/DL/ASTeC, Daresbury, Warrington, Cheshire, United Kingdom
Abstract Advancements in technology have taken bulk niobium cavities close to their theoretical operational limits of 45 MV/m, pushing the research to explore novel materials, such as niobium based alloys . Theoretical studies suggest that a composite material composed of alternative superconductor / insulator multilayers would surpass the bulk niobium limits. Chemical vapour deposition (CVD) can deposit mi-crons thick Nb films in less than an hour, at the expense of precise thickness control. Atomic layer deposition (ALD), instead, even if considerably slower than CVD can be used in applications where the thickness of the deposited layers needs to be controlled with a resolution down to the nanometer. This article presents the preliminary results obtained by using plasma assisted ALD techniques to deposit NbN based compounds starting from chlorinated precursors and organic ones, and the design for a new deposition system currently being built at the Daresbury Laboratories.
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Conference IPAC2017, Copenhagen, Denmark
Series International Particle Accelerator Conference (8th)
Proceedings Link to full IPAC2017 Proccedings
Session Posters Monday 3
Date 15-May-17   16:00–18:00
Main Classification 07 Accelerator Technology
Sub Classification T07 Superconducting RF
Keywords plasma, niobium, experiment, controls, simulation
Publisher JACoW, Geneva, Switzerland
Editors Volker RW Schaa (GSI, Darmstadt, Germany); Gianluigi Arduini (CERN, Geneva, Switzerland); Juliana Pranke (ESS, Lund, Sweden); Mike Seidel (PSI, Villigen, Switzerland); Mats Lindroos (ESS, Lund, Sweden)
ISBN 978-3-95450-182-3
Published May 2017
Copyright
Copyright © 2017 by JACoW, Geneva, Switzerland     CC-BY Creative Commons License
cc Creative Commons Attribution 3.0